TA-MRAM

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	INESC MN	Microsistemas & Nanotecnologias

Thermally-Assisted Magnetic Random Access Memories (TAMRAM)

Introduction

The Thermally Assisted Magnetic Random Access Memory concept, patented in 2002 by Spintec and Léti, and by NVE, is being studied as an alternative solution to the main limitations of the current switching MRAM technologies: power consumption, selectivity and scalability. Incorporating thermal barriers can reduce the write power

For more information on this topic, contact Paulo Freitas or Susana Cardoso Freitas.

Main Results

Optimization of GeSbTe film growth to be used as thermal barrier: reduction of the film roughness down to 0.3nm and avoid delamination during microfabrication. Incorporation of thermal barriers in MRAM cells based on AlOx and MgO tunnel junctions.
Demonstration of thermally assisted magnetic switching using GeSbTe thermal barriers. Writing power densities of ~10mW/um2 were achieved (~20 without thermal barriers). This work in under progress, for submicron devices fabricated using the e-beam system at INESC-MN.
A start-up company (CROCUS Technology - Grenoble) was created based on the IP developed by Spintec-Leti and the know-how acquired during the EU-NEXT project, aiming the production of MRAM prototypes incorporating the thermal barriers for thermally assisted switching. INESC-MN is presently doing the technology transfer for thermal barriers on 200mm wafers. The Ion beam system N3600 was recently upgraded to run with 200 mm wafers.

Projects and Collaborations 2004 - present

“NEXT Low Power Magnetic Random Access Memory with Optimised Writing Time and Level of Integration” (NEXT-MRAM), IST-2001-37334, collaboration between CEA (Grenoble, FR), EPFL (Lausanne, FR), Univ. Kaiserslautern (DE), INESC-MN (Lisbon, PT), ATMEL Rousset SA, Applied materials (FR) and SINGULUS Technologies (DE) (2002-2007).
“MRAM Development and New Spin Electronic Devices” (MRAM), POCTI/CTM/45252/2002, INESC-MN, Univ.Porto, (2003-2006).

Industrial Collaborations

Technology transfer for GeSbTe thermal barrier incorporation in 200mm wafers, CROCUS, (2006 –2008).

Microfabrication of test devices for thermal conductivity characterization (2008-present)

Nanofabrication of low-RA MgO tunnel junctions for electrical robustness characterization

Patents and Awards

Among the 5 finalists for the FP6-DESCARTES PRIZES 2006, “Thermally Assisted Magnetic Random Access Memory” (TAM-RAM) CEA-Spintec, CEA-Leti, INESC-MN, Singulus)