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Thin-Film Nanoelectomechanical Structures (NEMS)
Fabrication and characterization of thin-film silicon nanoelectromechanical systems is currently underway. The first structures are electrostatically actuated bridges. The objective is higher integration density and to obtain high quality factor resonators with high resonance frequencies.
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Thin film n+-a-Si;H/TiW bilayer bridge resonator on a glass substrate. The thickness is t=130 nm, the width is w=500 nm, and the length l=5 μm. |
